CR13N50FA9K Overview
: VD SS 500 V CR13N50F A9K, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 39 W which reduce the conduction loss, improve switching RD S ( O N)Typ 0.38 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords...