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Silicon N-Channel Power MOSFET
CR13N50F A9K
General Description：
VD SS
500
V
CR13N50F A9K, the silicon N-channel Enhanced ID
13
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
39
W
which reduce the conduction loss, improve switching
RD S ( O N)Typ
0.38
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
F e atures：
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applic ations：
Pow er s witch circuit of adaptor and c harger.
CR13N50FA9K Datasheet
