CRG100T65RK5SDZ - Silicon FS Trench IGBT

CR Micro

General Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Key Features

FS Trench Technology, Positive temperature coefficient.
Low saturation voltage： VCE(sat),TYP=1.55V @IC=100A,VGE=15V；.
Low switching loss.

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CRG100T65RK5SDZ silicon fs trench igbt by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRG100T65RK5SDZ
Manufacturer	CR Micro
File Size	1.02 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG100T65RK5SDZ Datasheet

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Full PDF Text Transcription (Reference)

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Silicon FS Trench IGBT CRG100T65RK5SDZ General Description： Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.55V @IC=100A,VGE=15V； ● Low switching loss Applications ● Motor Control ● Solar converts ● Charger VCES 650 V IC 100 A Ptot （TC=25℃） 540 W VCE(sat) 1.55 V Package:TO-247 Equivalent circuit: Package Parameters Type CRG100T65RK5SDZ Package TO-247 Marking G100T65RK5SDZ Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.