Datasheet Summary
Silicon FS Trench IGBT CRG100T65RK5SDZ
General Description：
Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS pliant.
Features
：
- FS Trench Technology, Positive temperature coefficient
- Low saturation voltage： VCE(sat),TYP=1.55V @IC=100A,VGE=15V；
- Low switching loss
Applications
- Motor Control
- Solar converts
- Charger
VCES
650 V
100 A
Ptot （TC=25℃） 540
VCE(sat)
1.55 V
Package:TO-247
Equivalent circuit:
Package Parameters
Type CRG100T65RK5SDZ
Package TO-247
Marking G100T65RK5SDZ
Packing Tube
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2025V01
CRG100T65RK5SDZ...