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CRG25T120BKR3S - Silicon FS Trench IGBT

General Description

Using CRM's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Key Features

  • Trench FS Technology, Positive temperature coefficient.
  • Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A.
  • Extremely enhanced avalanche capability VCES IC Ptot (TC=25℃) VCE(SAT) TO-247 1200 V 25 A 208 W 1.95 V.

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Datasheet Details

Part number CRG25T120BKR3S
Manufacturer CR Micro
File Size 698.79 KB
Description Silicon FS Trench IGBT
Datasheet download datasheet CRG25T120BKR3S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon FS Trench IGBT CRG25T120BKR3S General Description： Using CRM's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. Features：  Trench FS Technology, Positive temperature coefficient  Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A  Extremely enhanced avalanche capability VCES IC Ptot (TC=25℃) VCE(SAT) TO-247 1200 V 25 A 208 W 1.95 V Applications： Power switch circuit of induction cooker(IH).