CRJQ065N60G3F-G Datasheet | CR Micro

Description ： CRJQ065N60G3F-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-247, which accords with the Ro HS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features ： - Fast Switching - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test - Halogen Free - Zener-Protected 50 mΩ 8.5 u J Applications： Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 dv/dt dif/dt VESD(G-S) TJ，Tstg Drain-to-Source Voltage(VGS=0V) Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt ruggedness Maximum diode munication speed Power Dissipation(TC=25°C) Gate source ESD (HBM-C= 100p F, R=1.5kΩ) Operating and Storage Temperature Range Rating 600 40 120 ±30 675 15 50 500 187 2000 - 55…+150 Units V A A V m J V/ns V/ns A/us W V ℃ WUXI CHINA RE SOURCE S HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2023V02 Electrical Characteristics（Tj= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS ΔBVDSS/ΔTJ IDSS IGSS(F)...