CRJQ065N60G3F-G - Silicon N-Channel Power MOSFET

CR Micro

General Description

CRJQ065N60G3F-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.
Zener-Protected 600 V 40 A 187 W 50 mΩ 8.5 uJ.

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CRJQ065N60G3F-G silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRJQ065N60G3F-G
Manufacturer	CR Micro
File Size	1.18 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CRJQ065N60G3F-G Datasheet

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Silicon N-Channel Power MOSFET CRJQ065N60G3F-G General Description： CRJQ065N60G3F-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-247, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features：  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free  Zener-Protected 600 V 40 A 187 W 50 mΩ 8.5 uJ Applications： Power switch circuit of adaptor, charger and LED.