CRJQ125N65G2BF Datasheet | CR Micro

Features - CRM(CQ) Super_Junction technology - Much lower Ron- A performance for On-state efficiency - Better efficiency due to very low FOM - Ultra-fast body diode - Qualified for industrial grade applications according to JEDEC Product Summary VDS,min RDS(on),typ ID 650V 103mΩ 27A Applications - LED/LCD/PDP TV and monitor Lighting - Solar/Renewable/UPS-Micro Inverter System - Charger - Power Supply 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking CRJQ125N65G2BF CRJQ125N65G2BF Package TO-247 Packing Tube Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current 1) TC = 25°C TC = 100°C Pulsed drain current 2)(TC = 25°C, tp limited by Tj,max) Avalanche energy, single pulse (L=30m H) MOSFET dv/dt ruggedness Gate-Source voltage Power dissipation (TC = 25°C) Continuous diode forward current(TC = 25°C) Diode pulse current 2) (TC = 25°C) Recovery diode dv/dt 3) Operating junction and storage temperature 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg Reel Size N/A Symbol VDS ID,pulse EAS dv/dt VGS Ptot IS IS,pulse dv/dt Tj , Tstg Rev1.1 ©China Resources Microelectronics (Chongqing) Limited Tape Width N/A Value 650 27 17 80 300 50 ±30 210 27 80 50 -55...+150 Qty 25pcs Unit V A m J V/ns V W A A V/ns...