CRJQ140N65G2BF
CRJQ140N65G2BF is SJMOS N-MOSFET manufactured by CR Micro.
Features
Product Summary
- CRM(CQ) Super_Junction technology
- Much lower Ron- A performance for On-state efficiency
- Better efficiency due to very low FOM
- Ultra-fast body diode
VDS,min RDS(on),typ ID
650V 110mΩ 25A
Applications
- LED/LCD/PDP TV and monitor Lighting
- Solar/Renewable/UPS-Micro Inverter System
- Charger
- Power Supply
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part #
Marking
Package
CRJQ140N65G2BF CRJQ140N65G2BF TO-247-3L
Packing Tube
Reel Size N/A
Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current 1)
TC = 25°C TC = 100°C Pulsed drain current 2)(TC = 25°C, tp limited by Tj,max) Avalanche energy, single pulse (L=30m H)
MOSFET dv/dt ruggedness
Gate-Source voltage Power dissipation (TC = 25°C) Continuous diode forward current(TC = 25°C) Diode pulse current 2) (TC = 25°C) Recovery diode dv/dt 3) Operating junction and storage temperature
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg
Symbol VDS
ID,pulse EAS dv/dt VGS Ptot IS
IS,pulse dv/dt Tj , Tstg
Rev0.1
©China Resources Microelectronics (Chongqing) Limited
Tape Width N/A
Value 650
25 16 75 300 50 ±30 207 25 75 50 -55...+150
Qty 25pcs
Unit V
A m J V/ns V W A A V/ns °C
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