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CRMV0411C - 40V Complementary Power MOSFET

Features

  • Uses CRM(CQ) advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Complementary N-ch and P-ch MOSFET.

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Datasheet preview – CRMV0411C

Datasheet Details

Part number CRMV0411C
Manufacturer CR Micro
File Size 1.17 MB
Description 40V Complementary Power MOSFET
Datasheet download datasheet CRMV0411C Datasheet
Additional preview pages of the CRMV0411C datasheet.

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Full PDF Text Transcription

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Complementary N-ch and P-ch MOSFET Applications • Motor drive CRMV0411C 40V Complementary Power MOSFET Product Summary Symbol N-Ch VDS 40V RDS(on) typ. 9mΩ ID 28A P-Ch -40V 27mΩ -20A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width CRMV0411C CRMV0411C TO-252-5 Taping N/A N/A Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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