CRTB360N06L-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET CRTB360N06L-G General Description： VDSS CRTB360N06L-G, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy. The transistor RDS(ON) Typ@Vgs=4.5V 31 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the Halogen Free standard. Features ： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse...