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Silicon N-Channel Power MOSFET CRTB360N06L-G
General Description：
VDSS
60
V
CRTB360N06L-G, the silicon N-channel Enhanced ID
7
A
VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃)
2.6
W
which reduce the conduction loss, improve switching
RDS(ON) Typ@Vgs=10V
26
mΩ
performance and enhance the avalanche energy. The transistor
RDS(ON) Typ@Vgs=4.5V
31
mΩ
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOT-223, which accords with the Halogen Free standard.
Features：
l Fast Switching
l Low ON Resistance
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
l Halogen Free
Applications：
l Power switch circuit of adaptor and charger.
CRTB360N06L-G Datasheet
