CRTB360N06L-G Overview
: VDSS 60 V CRTB360N06L-G, the silicon N-channel Enhanced ID 7 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 2.6 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy. The transistor RDS(ON) Typ@Vgs=4.5V 31 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package...