CRTB360N06L-G - Silicon N-Channel Power MOSFET

Product Overview

CR Micro

Datasheet Details

Part number	CRTB360N06L-G
Manufacturer	CR Micro
File Size	1.24 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CRTB360N06L-G Datasheet
Additional preview pages of the CRTB360N06L-G datasheet.

Product details

Description

VDSS 60 V CRTB360N06L-G, the silicon N-channel Enhanced ID 7 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 2.6 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy.The transistor RDS(ON) Typ@Vgs=4.5V 31 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the Halogen Free standard.

Features

l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

📁 Similar Datasheet

CRT-40 - Latching SPDT Coaxial Switch (Teledyne)
CRT0402 - Thin Film Precision Chip Resistors (BOURNS)
CRT0402-AS - Sulfur-Resistant Thin Film Precision Chip Resistors (BOURNS)
CRT0402-ST - Thin Film Precision Chip Resistors (BOURNS)
CRT0402A - Thin Film Precision Chip Resistors (BOURNS)
CRT0603 - Thin Film Precision Chip Resistors (BOURNS)
CRT0603-AS - Sulfur-Resistant Thin Film Precision Chip Resistors (BOURNS)
CRT0603-ST - Thin Film Precision Chip Resistors (BOURNS)

Other Datasheets by CR Micro

CRTD019N03L2-G - Silicon N-Channel Power MOSFET
CRTD028N03L2-G - Silicon N-Channel Power MOSFET
CRTD028N04L2-G - Silicon N-Channel Power MOSFET
CRTD030N03L - 30V Trench N-MOSFET
CRTD030N04L - 40V Trench N-MOSFET
CRTD032N03L2P - Silicon N-Channel Power MOSFET

Published: Jul 19, 2025 |