Datasheet Details
| Part number | CRTB360N06L-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 1.24 MB |
| Description | Silicon N-Channel Power MOSFET |
| Download | CRTB360N06L-G Download (PDF) |
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| Part number | CRTB360N06L-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 1.24 MB |
| Description | Silicon N-Channel Power MOSFET |
| Download | CRTB360N06L-G Download (PDF) |
|
|
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： VDSS 60 V CRTB360N06L-G, the silicon N-channel Enhanced ID 7 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 2.6 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy.
The transistor RDS(ON) Typ@Vgs=4.5V 31 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is SOT-223, which accords with the Halogen Free standard.
Silicon N-Channel Power MOSFET CRTB360N06L-G General.
| Part Number | Description |
|---|---|
| CRTD019N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD030N03L | 30V Trench N-MOSFET |
| CRTD030N04L | 40V Trench N-MOSFET |
| CRTD032N03L2P | Silicon N-Channel Power MOSFET |
| CRTD034N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD039N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD045N03L | Trench N-MOSFET |
| CRTD045N04L2P | Silicon N-Channel Power MOSFET |