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CRTD085N06N2-G - Trench N-MOSFET

Features

  • Uses CRM advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet preview – CRTD085N06N2-G

Datasheet Details

Part number CRTD085N06N2-G
Manufacturer CR Micro
File Size 1.04 MB
Description Trench N-MOSFET
Datasheet download datasheet CRTD085N06N2-G Datasheet
Additional preview pages of the CRTD085N06N2-G datasheet.

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Full PDF Text Transcription

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Electrical tools • Lithium battery protection CRTD085N06N2-G Trench N-MOSFET 60V, 6.5mΩ, 85A Product Summary VDS 60V RDS(on) typ. ID (Silicon limit) 6.5mΩ 85A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRTD085N06N2-G Marking T085N06N2 Package TO-252 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit)a1 TC = 25°C (Package limit)a1 TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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