CRTD125P06LQ Description
华润微电子(重庆)有限公司.
CRTD125P06LQ Key Features
- Uses CRM(CQ) advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- AEC-Q101 Qualified
- MSL1 up to 260°C peak reflow
CRTD125P06LQ is Trench P-MOSFET manufactured by CR Micro.
| Part Number | Description |
|---|---|
| CRTD105N06L | Trench N-MOSFET |
| CRTD110N03L | MOSFET |
| CRTD140P03L | Trench P-MOSFET |
| CRTD140P04L2-G | Trench P-MOSFET |
| CRTD14DP15L2Z | Trench P-MOSFET |
华润微电子(重庆)有限公司.