CRTD170N10N Datasheet | CR Micro

Features - Uses CRM(CQ) advanced Trench technology - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - Qualified according to JEDEC criteria Applications - Motor control and drive - Battery management - UPS (Uninterrupible Power Supplies) Trench N-MOSFET 100V, 15mΩ, 53A Product Summary 100V RDS(on) typ. 15mΩ 53A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking Package Packing CRTD170N10N CRTD170N10N TO-252 Reel Reel Size N/A Tape Width N/A Qty 2500 Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5m H, Rg=25Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Symbol VDS ID pulse EAS VGS Ptot Tj , T stg Tsold Value 100 Unit...