• Part: CRTD190P06L2-G
  • Description: Trench P-MOSFET
  • Category: MOSFET
  • Manufacturer: CR Micro
  • Size: 0.99 MB
Download CRTD190P06L2-G Datasheet PDF
CR Micro
CRTD190P06L2-G
CRTD190P06L2-G is Trench P-MOSFET manufactured by CR Micro.
Features - Uses CRM advanced Trench technology - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - Qualified according to JEDEC criteria Applications - Motor control and drive - Electrical tools - Lithium battery protection Trench P-MOSFET -60V, 16.3mΩ, -60A Product Summary -60V RDS(on) typ. ID (Silicon limit) 16.3mΩ -60A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRTD190P06L2-G Marking T190P06L2 Package TO-252 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit)a1 TC = 25°C (Package limit)a1 TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5m H) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Reel Size N/A Symbol VDS ID pulse EAS VGS Ptot Tj , T stg Tsold Tape Width N/A Qty 2500pcs Value -60 Unit...