CRTD190P06L2-G
CRTD190P06L2-G is Trench P-MOSFET manufactured by CR Micro.
Features
- Uses CRM advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent Qgx RDS(on) product(FOM)
- Qualified according to JEDEC criteria
Applications
- Motor control and drive
- Electrical tools
- Lithium battery protection
Trench P-MOSFET -60V, 16.3mΩ, -60A
Product Summary
-60V
RDS(on) typ. ID (Silicon limit)
16.3mΩ -60A
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part # CRTD190P06L2-G
Marking T190P06L2
Package TO-252
Packing Reel
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current
TC = 25°C (Silicon limit)a1 TC = 25°C (Package limit)a1 TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax)
Avalanche energy, single pulse (L=0.5m H)
Gate-Source voltage
Power dissipation (TC = 25°C)
Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s)
Reel Size N/A
Symbol VDS
ID pulse EAS VGS Ptot
Tj , T stg Tsold
Tape Width N/A
Qty 2500pcs
Value -60
Unit...