CRTD680P10LQ Overview
华润微电子(重庆)有限公司.
CRTD680P10LQ Key Features
- Uses CRM(CQ) advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- AEC-Q101 Qualified
- MSL1 up to 260°C peak reflow
| Part number | CRTD680P10LQ |
|---|---|
| Datasheet | CRTD680P10LQ-CRMicro.pdf |
| File Size | 1.43 MB |
| Manufacturer | CR Micro |
| Description | Trench P-MOSFET |
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华润微电子(重庆)有限公司.
| Part Number | Description |
|---|---|
| CRTD019N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD030N03L | 30V Trench N-MOSFET |
| CRTD030N04L | 40V Trench N-MOSFET |
| CRTD032N03L2P | Silicon N-Channel Power MOSFET |
| CRTD034N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD038P03L2-G | Trench P-MOSFET |
| CRTD039N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD045N03L | Trench N-MOSFET |