CRTD680P10LQ Description
华润微电子(重庆)有限公司.
CRTD680P10LQ Key Features
- Uses CRM(CQ) advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- AEC-Q101 Qualified
- MSL1 up to 260°C peak reflow
- Part: CRTD680P10LQ
- Manufacturer: CR Micro
- Size: 1.43 MB
Related CR Micro Datasheets
| Part Number | Description |
|---|---|
| CRTD019N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD030N03L | 30V Trench N-MOSFET |
| CRTD030N04L | 40V Trench N-MOSFET |