CRTD680P10LQ
CRTD680P10LQ is Trench P-MOSFET manufactured by CR Micro.
Features
- Uses CRM(CQ) advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent Qgx RDS(on) product(FOM)
- AEC-Q101 Qualified
- MSL1 up to 260°C peak reflow
Applications
- Motor control and drive
- Battery management
- UPS (Uninterrupible Power Supplies)
Trench P-MOSFET -100V, 72mΩ, -18A
Product Summary
-100V
RDS(on)@10V typ
72mΩ
-18A
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part # CRTD680P10LQ
Marking 680P10LQ
Package TO-252
Packing Tape&reel
Reel Size N/A
Absolute Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (ID=-17A, Rg=25Ω)[1]
ID pulse EAS
Gate-Source voltage
Power dissipation (TC = 25°C)
Ptot
Operating junction and storage temperature
Tj , T...
