Datasheet4U Logo Datasheet4U.com

CRXQC75M120G2Q - SiC MOSFET

Datasheet Summary

Features

  • Qualified according to AEC Q101.
  • CRM G2 SIC MOSFET Technology.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Avalanche Ruggedness.
  • Fast Reverse Recovery.

📥 Download Datasheet

Datasheet preview – CRXQC75M120G2Q

Datasheet Details

Part number CRXQC75M120G2Q
Manufacturer CR Micro
File Size 1.28 MB
Description SiC MOSFET
Datasheet download datasheet CRXQC75M120G2Q Datasheet
Additional preview pages of the CRXQC75M120G2Q datasheet.

📁 Similar Datasheet

  • CRX0505N - DC-DC Converter (TDK)
  • CRX0512N - DC-DC Converter (TDK)
  • CRX0512P - DC-DC Converter (TDK)
  • CRX0515N - DC-DC Converter (TDK)
  • CRX0515P - DC-DC Converter (TDK)
  • CRX14 - I2C Short Range Contactless Coupler (STMicroelectronics)
Other Datasheets by CR Micro

Full PDF Text Transcription

Click to expand full text
Features • Qualified according to AEC Q101 • CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Ruggedness • Fast Reverse Recovery Applications • Solar Inverters • High Voltage DC/DC Converters • On Board Charger(OBC) • EV Charger CRXQC75M120G2Q SiC MOSFET 1200V, 75mΩ, 32A Product Summary VDS RDS(on)_typ ID 1200V 75mΩ 32A 100% Avalanche Tested Package Marking and Ordering Information Part # CRXQC75M120G2Q Marking CRXQC75M120G2Q Package TO-247-4C Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current VGS=15V，TC = 25°C VGS=15V，TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source voltage (dynamic) Gate-Sour
Published: |