Datasheet4U Logo Datasheet4U.com

CRXQF25M065G2Q - SiC MOSFET

Features

  • Qualified according to AEC Q101.
  • CRM G2 SIC MOSFET Technology.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Avalanche Ruggedness.
  • Fast Reverse Recovery.

📥 Download Datasheet

Datasheet preview – CRXQF25M065G2Q

Datasheet Details

Part number CRXQF25M065G2Q
Manufacturer CR Micro
File Size 1.24 MB
Description SiC MOSFET
Datasheet download datasheet CRXQF25M065G2Q Datasheet
Additional preview pages of the CRXQF25M065G2Q datasheet.

📁 Similar Datasheet

  • CRX0505N - DC-DC Converter (TDK)
  • CRX0512N - DC-DC Converter (TDK)
  • CRX0512P - DC-DC Converter (TDK)
  • CRX0515N - DC-DC Converter (TDK)
  • CRX0515P - DC-DC Converter (TDK)
  • CRX14 - I2C Short Range Contactless Coupler (STMicroelectronics)
Other Datasheets by CR Micro

Full PDF Text Transcription

Click to expand full text
Features • Qualified according to AEC Q101 • CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Ruggedness • Fast Reverse Recovery Applications • Switching Mode Power Supply(SMPS) • High Voltage DC/DC Converters • On Board Charger(OBC) • EV Charger CRXQF25M065G2Q SiC MOSFET 650V, 25mΩ, 97A Product Summary VDS RDS(on)_typ ID 650V 25mΩ 97A 100% Avalanche Tested Package Marking and Ordering Information Part # CRXQF25M065G2Q Marking CRXQF25M065G2Q Package TO-247-4 Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current VGS=15V，TC = 25°C VGS=15V，TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source voltage (dyn
Published: |