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Features
• CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Ruggedness • Fast Reverse Recovery
Applications • Switching Mode Power Supply(SMPS) • High Voltage DC/DC Converters • On Board Charger(OBC) • EV Charger
CRXQF25M065G2Z
SiC MOSFET 650V, 25mΩ, 97A Product Summary
VDS RDS(on)_typ ID
650V 25mΩ 97A
100% Avalanche Tested
Package Marking and Ordering Information
Part # CRXQF25M065G2Z
Marking CRXQF25M065G2Z
Package TO-247-4L
Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current
VGS=15V,TC = 25°C VGS=15V,TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source voltage (dynamic)a1 Gate-Source voltage (stat