CS100N03A4-G - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤4.5 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

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CS100N03A4-G silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS100N03A4-G
Manufacturer	CR Micro
File Size	853.60 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS100N03A4-G Datasheet

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Silicon N-Channel Power MOSFET ○R CS100N03 A4-G General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 30 100 60 77.1 3.3 V A A W mΩ suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤4.5 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger.