CR Micro CS100N06D8
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.| Part No. | CS100N06D8 |
|---|---|
| Datasheet | CS100N06D8 Download |
| Manufacturer |  CR Micro |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
： CS100N06 D8 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.FEATURES
：● Fast Switching
● Low ON Resistance (Rdson≤10mΩ)
● Low Gate Charge (Typical Data: 88.8nC)
● Low Reverse transfer capacitances(Typical:220pF)
● 100% Single Pulse avalanche energy Test
APPLICATIONS
： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 100 156 6.5 Rating 60 100 70 400 ±20 211 156 150，–55 to 150 300 V A W mΩ Units V A A A V mJ W ℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
