CS100N06D3-G - Silicon N-Channel Power Trench MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance (Rdson≤10mΩ).
Low Gate Charge (Typical Data: 88.8nC).
Low Reverse transfer capacitances(Typical:220pF).
100% Single Pulse avalanche energy Test.
Halogen Free.

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CS100N06D3-G silicon n-channel power trench mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS100N06D3-G
Manufacturer	CR Micro
File Size	1.68 MB
Description	Silicon N-Channel Power Trench MOSFET
Datasheet	CS100N06D3-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power Trench MOSFET ○R CS100N06 D3-G General Description： CS100N06 D3-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance (Rdson≤10mΩ)  Low Gate Charge (Typical Data: 88.8nC)  Low Reverse transfer capacitances(Typical:220pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger.