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Silicon N-Channel Power Trench MOSFET
○R
CS100N06 D4
General Description：
CS100N06 D4 the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance (Rdson≤10mΩ)
Low Gate Charge (Typical Data: 88.8nC)
Low Reverse transfer capacitances(Typical:220pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS100N06D4 Datasheet
