CS100N06A8 Description
： CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench VDSS ID（Silicon limited current） RDS(ON)Typ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard.