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Silicon N-Channel Power MOSFET
○R
CS100N06 A8
General Description：
CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench
VDSS ID（Silicon limited current） RDS(ON)Typ
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Motor drive、power tools
60 V 90 A 6.
CS100N06A8 Datasheet
