CS100N08A0 Overview
： CS100N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS...
CS100N08A0 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤8.5mΩ)
- Low Gate Charge (Typical Data:59.8nC)
- Low Reverse transfer capacitances(Typical:237pF)
- 100% Single Pulse avalanche energy Test