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Silicon N-Channel Power MOSFET
○R
CS100N08 A0
General Description：
CS100N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching
VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
Features：
Fast Switching Low ON Resistance(Rdson≤8.5mΩ) Low Gate Charge (Typical Data:59.8nC) Low Reverse transfer capacitances(Typical:237pF) 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS100N08A0 Datasheet
