CS100N08A8 Overview
： VDSS 85 V CS100N08 A8, the silicon N-channel Enhanced ID（Silicon limited current） 100 A VDMOSFETs, is obtained by advanced Trench Technology PD(TC=25℃) 198 W which reduce the conduction loss, improve switching RDS(ON)Typ 6.6 mΩ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB,...
CS100N08A8 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤8.5mΩ)
- Low Gate Charge (Typical Data:59.8nC)
- Low Reverse transfer capacitances(Typical:237pF)
- 100% Single Pulse avalanche energy Test