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Silicon N-Channel Power MOSFET
○R
CS100N08 A8
General Description：
VDSS
85
V
CS100N08 A8, the silicon N-channel Enhanced
ID（Silicon limited current）
100
A
VDMOSFETs, is obtained by advanced Trench Technology
PD(TC=25℃)
198 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
6.6 mΩ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤8.5mΩ) Low Gate Charge (Typical Data:59.8nC) Low Reverse transfer capacitances(Typical:237pF) 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS100N08A8 Datasheet
