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CS10N06BE-G - Silicon N-Channel Power MOSFET

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Part number CS10N06BE-G
Manufacturer CR Micro
File Size 680.90 KB
Description Silicon N-Channel Power MOSFET
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Description

CS10N06 BE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications..The package form is SOP-8, which accords with the RoHS standard.

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