CS120N10A0 - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer capacitances(Typical:311pF) l 100% Single Pulse avalanche energy Test.

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CS120N10A0 silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS120N10A0
Manufacturer	CR Micro
File Size	310.84 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS120N10A0 Datasheet

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Silicon N-Channel Power MOSFET ○R CS120N10 A0 General Description： CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS 100 V ID(Silicon limited Current) 120 A ID(Package limited Current) 120 A PD(TC=25℃) 198 W RDS(ON)Typ 7.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤9.