CS120N10A0 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS120N10 A0 General Description： CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID(Silicon limited Current) ID(Package limited Current) PD(TC=25℃) 198 W RDS(ON)Typ 7.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer...