CS120N10A8
Overview
： CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS 100 V ID(Silicon limited Current) 120 A ID(Package limited Current) 120 A PD(TC=25℃) 198 W RDS(ON)Typ 7.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.
