CS120N10A8
CS120N10A8 is manufactured by CR Micro.
Silicon N-Channel Power MOSFET
○R
CS120N10 A8
General Description：
CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
VDSS
ID(Silicon limited Current)
ID(Package limited Current)
PD(TC=25℃)
198 W
RDS(ON)Typ
7.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer...
