CS14N25A8R Overview
： CS14N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
CS14N25A8R Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.25Ω)
- Low Gate Charge (Typical Data:22.7nC)
- Low Reverse transfer capacitances(Typical:13pF)
- 100% Single Pulse avalanche energy Test