CS14N25FA9R Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS14N25F A9R General Description： VDSS CS14N25F A9R, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which reduce the conduction loss, improve switching RDS(ON)Typ 0.20 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.25Ω) l Low Gate Charge (Typical Data:22.7nC) l Low Reverse transfer capacitances(Typical:13pF) l 100% Single Pulse avalanche...