CS180N10A0 Overview
： CS180N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 100 180 120 312.5 RDS(ON)Typ 4.1 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher...
CS180N10A0 Key Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances(Typical:418pF)
- 100% Single Pulse avalanche energy Test