CS180N10A8 Overview
: CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID(Silicon limited current) ID(Package limited current) PD(TC=25℃) 100 180 120 312.5 RDS(ON)Typ 4.1 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher...