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CS180N10A8 - Silicon N-Channel Power MOSFET

General Description

CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:418pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS180N10A8
Manufacturer CR Micro
File Size 408.55 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS180N10A8 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS180N10 A8 General Description： CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 100 180 120 312.5 RDS(ON)Typ 4.1 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:418pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.