CS18N20A3R Description
： CS18N20 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 V 18 A 100 W 0.12 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with...
CS18N20A3R Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.18Ω)
- Low Gate Charge (Typical Data:20.4nC)
- Low Reverse transfer capacitances(Typical:16.4pF)
- 100% Single Pulse avalanche energy Test