CS18N20A4RZ-G - Silicon N-Channel Power MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤0.18Ω).
Low Gate Charge (Typical Data:20.4nC).
Low Reverse transfer capacitances(Typical:16.4pF).
100% Single Pulse avalanche energy Test.
Halogen Free.

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CS18N20A4RZ-G silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS18N20A4RZ-G
Manufacturer	CR Micro
File Size	621.90 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS18N20A4RZ-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS18N20 A4RZ-G General Description： CS18N20 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤0.18Ω)  Low Gate Charge (Typical Data:20.4nC)  Low Reverse transfer capacitances(Typical:16.4pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger.