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CS18N20A4R - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS18N20A4R
Manufacturer CR Micro
File Size 405.57 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS18N20A4R Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS18N20 A4R General Description： CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 V 18 A 100 W 0.12 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.