CS18N20A4R Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS18N20 A4R General Description： CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche...