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Silicon N-Channel Power MOSFET
○R
CS1N15ASFD-G
General Description：
CS1N15ASFD-G, the silicon N-channel Depletion-Mode VDMOSFETs, is obtained by advanced planar Technology which
VDSX ID min RDS(ON)Typ
reduce the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher efficiency.
The package form is SOT-23, which accords with the RoHS standard.
Features：
l ESD improved Capability l Depletion-mode ( Normally-on) l Fast Switching
l Low On-Resistance l Improved dv/dt capability l Halogen free available
150
V
0.2
A
4
Ω
Applications：
Power switch circuit of adaptor and charger.
CS1N15ASFD-G Datasheet
