CS1N15ASFD-G Description
： CS1N15ASFD-G, the silicon N-channel Depletion-Mode VDMOSFETs, is obtained by advanced planar Technology which VDSX ID min RDS(ON)Typ reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-23, which accords with the RoHS standard.