CS230N06B0 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS230N06 B0 General Description： CS230N06 B0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-263, which accords with the RoHS standard. VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 230 A 284 W 3 mΩ Features ： l Fast Switching l Low ON Resistance(Rdson≤3.6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and...