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CS230N06B0 - Silicon N-Channel Power MOSFET

General Description

CS230N06 B0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤3.6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS230N06B0
Manufacturer CR Micro
File Size 429.87 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS230N06B0 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS230N06 B0 General Description： CS230N06 B0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-263, which accords with the RoHS standard. VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 230 A 284 W 3 mΩ Features： l Fast Switching l Low ON Resistance(Rdson≤3.6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.