CS230N06B8 Datasheet PDF - CR Micro Silicon N-Channel Power MOSFET Specs

CS230N06B8 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS230N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

l Fast Switching l Low ON Resistance(Rdson≤3.6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

Datasheet Details

Part number	CS230N06B8
Manufacturer	CR Micro
File Size	429.20 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS230N06B8 Datasheet
Additional preview pages of the CS230N06B8 datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS230N06 B8 General Description： CS230N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

Published: Dec 9, 2024 |