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Silicon N-Channel Power MOSFET
○R
CS24N60ANR
General Description：
VDSS
600
V
CS24N60 ANR, the silicon N-channel Enhanced ID
24
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
420
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.21
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P
（N）, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:90.5 nC) l Low Reverse transfer capacitances(Typical:19 pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS24N60ANR Datasheet
