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CS300N04A8 - Silicon N-Channel Power MOSFET

General Description

CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.0 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS300N04A8
Manufacturer CR Micro
File Size 501.58 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS300N04A8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS300N04 A8 General Description： CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.