CS300N04AR Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS300N04 AR General Description： CS300N04 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 40 V 300 A 120 A 271.7 W 1.6 mΩ suitable for use as a load switch and PWM applications. The package form is TO-262, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤2.0 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： l BLDC...