CS300N04AR Overview
Description
： CS300N04 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 40 V 300 A 120 A 271.7 W 1.6 mΩ suitable for use as a load switch and PWM applications.
