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CS4N80A4R-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤3.8Ω).
  • Low Gate Charge (Typical Data:19.8 nC).
  • Low Reverse transfer capacitances(Typical:4.4 pF).
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet Details

Part number CS4N80A4R-G
Manufacturer CR Micro
File Size 903.27 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N80A4R-G Datasheet

Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS4N80 A4R-G General Description: CS4N80 A4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252 which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance(Rdson≤3.8Ω)  Low Gate Charge (Typical Data:19.8 nC)  Low Reverse transfer capacitances(Typical:4.4 pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications: Electric welder、Inverter.