CS4N90A3HD-G Overview
： VDSS 900 CS4N90 A3HD-G, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 100 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS...
CS4N90A3HD-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤3Ω)
- Low Gate Charge (Typical Data:25.2nC)
- Low Reverse transfer capacitances(Typical:7.4pF)
- 100% Single Pulse avalanche energy Test