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Silicon N-Channel Power MOSFET
○R
CS4N90 A3HD-G
General Description：
VDSS
900
CS4N90 A3HD-G, the silicon N-channel Enhanced ID
4
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
100
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.6
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤3Ω) Low Gate Charge (Typical Data:25.2nC) Low Reverse transfer capacitances(Typical:7.4pF) 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS4N90A3HD-G Datasheet
