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CS4N90A3HD-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤3Ω).
  • Low Gate Charge (Typical Data:25.2nC).
  • Low Reverse transfer capacitances(Typical:7.4pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4N90A3HD-G
Manufacturer CR Micro
File Size 546.25 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N90A3HD-G Datasheet

Full PDF Text Transcription for CS4N90A3HD-G (Reference)

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Silicon N-Channel Power MOSFET ○R CS4N90 A3HD-G General Description: VDSS 900 CS4N90 A3HD-G, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligne...

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icon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 100 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance(Rdson≤3Ω)  Low Gate Charge (Typical Data:25.2nC)  Low Reverse transfer capacitances(Typical:7.4pF)  100% Single Pulse avalanche energy Test Applications: Power switch circuit of adapto