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CS4N90FA9HD - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤3Ω).
  • Low Gate Charge (Typical Data:25.2nC).
  • Low Reverse transfer capacitances(Typical:7.4pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4N90FA9HD
Manufacturer CR Micro
File Size 535.35 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N90FA9HD Datasheet

Full PDF Text Transcription for CS4N90FA9HD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS4N90FA9HD. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS4N90F A9HD General Description: VDSS 900 CS4N90F A9HD, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned ...

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on N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance(Rdson≤3Ω)  Low Gate Charge (Typical Data:25.2nC)  Low Reverse transfer capacitances(Typical:7.4pF)  100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor