CS8N05AEP-G Description
： VDSS 45 V CS8N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID 8 A obtained by advanced trench Technology which reduce the PD(TC=25℃) 3.1 W conduction loss, improve switching performance and RDS(ON)Typ (VGS=10V) 15 mΩ enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP-8, which accords with the...