CS8N05AEP-G Datasheet | CR Micro

Silicon N-Channel Trench MOSFET ○R CS8N05 AEP-G General Description： VDSS CS8N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID A obtained by advanced trench Technology which reduce the PD(TC=25℃) W conduction loss, improve switching performance and RDS(ON)Typ (VGS=10V) 15 mΩ enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP-8, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance (Rdson≤25mΩ) l Low Reverse transfer capacitances(Typical:71pF) l 100% Single Pulse avalanche energy Test l Halogen...