HGD032N03A Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R HGD032N03A General Description： HGD032N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. VDSS ID (Silicon Limited) ID (Package Limited) PD RDS(ON)Typ 30 V 120 A 60 A 78.1 W 2.4 mΩ Features ： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specified） Symbol VDSS ID IDMa2 VGS EAS a2 PD TJ，Tstg Parameter Drain-to-Source Voltage Continuous Drain Current TC = 25 °C (Silicon Limited) Continuous Drain Current TC = 25 °C(Package Limited) Continuous Drain Current TC = 100 °C(Package Limited) Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Rating 30 120 60 60 240 ±18 297.5 78.1 0.624 150，- 55 to 150 Units V A A A A V mJ W W/℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 7 2 019V01 HGD032N03A ○R Electrical Characteristics（Tj= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS IDSS IGSS(F) IGSS(R)...