HGD032N04A Datasheet Text
Silicon N-Channel Power MOSFET
○R
HGD032N04A
General Description:
HGD032N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
Features
:
- Fast Switching
- Low ON Resistance(Rdson@10v≤3.2mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger. Electric tool
VDSS ID(Silicon limited current) ID(Package limited) PD RDS(ON)Typ
40 V 145 A 60 A 96 W 2.5 mΩ
Absolute(Tj= 25℃ unless otherwise specified)
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 PD TJ,Tstg
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current Tc= 25°C(Package Limited) Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range
Rating
40 145 60 60 240 ±18 336 96 0.77 150,- 55 to 150
Units
V A A A A V mJ W W/℃ ℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2019V01
HGD032N04A
Electrical Characteristics(Tj= 25℃ unless otherwise specified):
OFF Characteristics...