HGD032N04A Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R HGD032N04A General Description： HGD032N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson@10v≤3.2mΩ) - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Electric tool VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 40 V 145 A 60 A 96 W 2.5 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current Tc= 25°C(Package Limited) Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Rating 40 145 60 60 240 ±18 336 96 0.77 150，- 55 to 150 Units V A A A A V mJ W W/℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2019V01 HGD032N04A Electrical Characteristics（Tj= 25℃ unless otherwise specified）： OFF Characteristics...