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HGQ011N03A-G - Silicon N-Channel Power MOSFET

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Datasheet Details

Part number HGQ011N03A-G
Manufacturer CR Micro
File Size 1.18 MB
Description Silicon N-Channel Power MOSFET
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Description

HGQ011N03A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. 6, which accords with the RoHS standard.

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