HGQ011N04A-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET HGQ011N04A-G General Description： HGQ011N04A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is PDFN5- 6, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test - Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ ® 40 V 310 A 100 A 156.2 W 0.92 mΩ Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Continuous Drain Current TC = 25 °C（Silicon limited） ID Continuous Drain Current TC = 25 °C (Package limited) a1 IDM VGS a2 EAS PD Continuous Drain Current TC = 100 °C (Package limited) Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C TJ，Tstg Operating Junction and Storage Temperature Range Rating 40 310 100 100 400 ±18...