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Silicon N-Channel Power MOSFET
○R
HGQ014N04A-G
General Description：
VDSS
40
V
HGQ014N04A-G, the silicon N-channel Enhanced
ID(Silicon Limited)
200
A
VDMOSFETs, is obtained by the high density Trench
ID(Package Limited)
100
A
technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
PD RDS(ON)Typ
96
W
1.1
mΩ
suitable for use as a load switch and PWM applications. The package form is PDFN5×6-8L, which accords with the RoHS
standard.
Features：
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
l Power switch circuit of adaptor and charger.
HGQ014N04A-G Datasheet
