Full PDF Text Transcription for HGQ014N04B-G (Reference)
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Silicon N-Channel Power MOSFET ○R HGQ014N04B-G General Description： VDSS 40 V HGQ014N04B-G, the silicon N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtaine...
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con N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtained by the high density Trench ID(Package Limited) 100 A technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is PD RDS(ON)Typ 96 W 1.1 mΩ suitable for use as a load switch and PWM applications. The package form is PDFN5×6-8L, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Halogen Free Applications： Power switch circuit of adaptor and charger.
HGQ014N04B-G Datasheet
