HGQ014N04B-G Overview
Description
： VDSS 40 V HGQ014N04B-G, the silicon N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtained by the high density Trench ID(Package Limited) 100 A technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is PD RDS(ON)Typ 96 W 1.1 mΩ suitable for use as a load switch and PWM applications.
Key Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free
