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CG2H40045 - RF Power GaN HEMT

Datasheet Summary

Features

  • Up to 4 GHz Operation.
  • 18 dB Small Signal Gain at 2.0 GHz.
  • 14 dB Small Signal Gain at 4.0 GHz.
  • 55 W Typical PSAT.
  • 60 % Efficiency at PSAT.
  • 28 V Operation.

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Datasheet preview – CG2H40045

Datasheet Details

Part number CG2H40045
Manufacturer CREE
File Size 1.25 MB
Description RF Power GaN HEMT
Datasheet download datasheet CG2H40045 Datasheet
Additional preview pages of the CG2H40045 datasheet.

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Full PDF Text Transcription

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CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. PPNa’sc:kCaGge2HTy4p0e0s4:54P4&02C0G62&H4404004252F3 FEATURES • Up to 4 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 14 dB Small Signal Gain at 4.
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